Published January 1, 1969
| Published
Journal Article
Open
The Effect of Trapping States on Tunneling in Metal Semiconductor Junctions
- Creators
- Parker, G. H.
-
Mead, C. A.
Abstract
The tunneling behavior of Schottky barriers has been investigated by several authors. The I-V characteristics exhibit an exponential form in the forward direction which can be used to determine the energy vs complex momentum dispersion relation for charge carriers in the forbidden gap. In this paper we show that under proper conditions the presence of traps can increase the tunneling probability and result in a reduction in the slope of the log I vs V characteristic by a factor of 2.
Additional Information
© 1969 The American Institute of Physics. Received 28 October 1968; in final form 27 November 1968. We wish to thank T. C. McGill for many helpful discussions, and L. van Atta, G. Picus, and N. Kyle of the Hughes Research Laboratories for supplying the CdTe, and an anonymous reviewer for valuable suggestions. The work was supported in part by the U.S. Office of Naval Research.Attached Files
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Additional details
- Eprint ID
- 52898
- Resolver ID
- CaltechAUTHORS:20141216-150229434
- Office of Naval Research (ONR)
- Created
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2014-12-17Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field