Published April 4, 2003
| public
Journal Article
Ultrahigh-Density Nanowire Lattices and Circuits
Chicago
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Abstract
We describe a general method for producing ultrahigh-density arrays of aligned metal and semiconductor nanowires and nanowire circuits. The technique is based on translating thin film growth thickness control into planar wire arrays. Nanowires were fabricated with diameters and pitches (center-to-center distances) as small as 8 nanometers and 16 nanometers, respectively. The nanowires have high aspect ratios (up to 10^6), and the process can be carried out multiple times to produce simple circuits of crossed nanowires with a nanowire junction density in excess of 10^(11) per square centimeter. The nanowires can also be used in nanomechanical devices; a high-frequency nanomechanical resonator is demonstrated.
Additional Information
© 2003 American Association for the Advancement of Science. 27 December 2002; accepted 4 March 2003. Published online 13 March 2003. Supported by the Office of Naval Research and the Defense Advanced Research Projects Agency. We thank M. Roukes and his group for teaching us how to perform high-frequency nanomechanical resonator measurements.Additional details
- Eprint ID
- 51965
- DOI
- 10.1126/science.1081940
- Resolver ID
- CaltechAUTHORS:20141119-115412847
- Office of Naval Research (ONR)
- Defense Advanced Research Projects Agency (DARPA)
- Created
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2014-11-19Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field