Published July 15, 1982
| public
Journal Article
Ion-beam-enhanced adhesion in the electronic stopping region
- Creators
- Griffith, J. E.
- Qiu, Yuanxum
- Tombrello, T. A.
Abstract
We report here the first use of ion beams in the electronic stopping region to improve the adhesion of insulators to other materials. In particular, we have dramatically improved the bonding of Au films to teflon, ferrite, and SiO_2 by bombarding them with He and Cl, respectively. Improvements in bonding have also been observed for Au on glass, Au and Cu on sapphire, and Si_3N_4 on Si. The mechanism is apparently associated with sputtering and track-forming processes occuring in the electronic stopping region. Numerous applications are discussed.
Additional Information
© 1982 North-Holland Publishing Company. Received 22 December 1981. Supported in part by the National Aeronautics and Space Administration [NGR 05-002-333, NAGW-148] and the National Science Foundation [PHY79-23638]. We thank H.J. Leamy, D. Goodstein, B. Landel, J. Moacanin, and S.K. Khanna for helpful discussions. I. Suni and M. Batur kindly made the Si_3N_4 samples, and P.Y. Hu generously provided the ferrite. M. Mendenhall, R. Miles and N. Wingreen gave valuable assistance in the lab.Additional details
- Eprint ID
- 51224
- Resolver ID
- CaltechAUTHORS:20141104-101855485
- NGR 05-002-333
- NASA
- NAGW-148
- NASA
- PHY79-23638
- NSF
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2014-11-04Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field