Published February 1, 1991
| public
Journal Article
Arsenic loss during palladium reaction with bulk and thin film gallium arsenide
Abstract
The loss of arsenic during reaction between GaAs (single crystal and thin film) and palladium (Pd) is reported. A chromium thin film was used as a collector for evaporating material during heat treatment. The amount of arsenic on the chromium collector was measured using backscattering spectrometry. It was found that more arsenic evaporates from the reacting GaAs/Pd samples than from bare GaAs.
Additional Information
© 1991 Elsevier Sequoia. Received November 30, 1989; Revised March 21, 1990; Accepted July 19, 1990. The authors would like to thank Rindge Shima, Rob Gorris, and Bart Stevens for their technical assistance. This work was initiated under DOD contract through the Sandia National Laboratories (02-6487) and pursued under financial support by the Army Research Office (DAAL03-89-K-0049) and NSF-M RG (DMR88-11795). M. Dobeli is indebted to the Swiss National Science Foundation for financial support.Additional details
- Eprint ID
- 51195
- Resolver ID
- CaltechAUTHORS:20141103-145239247
- DAAL03-89-K-0049
- Army Research Office (ARO)
- DMR88-11795
- NSF
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2014-11-03Created from EPrint's datestamp field
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2021-11-10Created from EPrint's last_modified field