Electronic-excitation mechanism in sputtering induced by high density electronic excitation

Abstract

On the basis of the assumption that two holes are attractive in a dense electron-hole plasma near the surface because of the Anderson negative-U interaction, the yield of laser- and ion-induced sputtering in the electronic excitation regime was calculated as a function of electron-hole concentration in a plasma. It is found that the model gives an order-of-magnitude account of the yields of these two sputtering processes.

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