Fabrication of GaAs/AlGaAs Quantum Well Lasers with MeV Oxygen Ion Implantation
Abstract
MeV oxygen ion implantation in GaAs/ AlGaAs has been shown to provide a simple and very promising technique for quantum well laser fabrication. A 10μm stripe single quantum well (SQW) graded-index separation confinement heterostructure (GRINSCH) laser made in this way has achieved high performance with high quantum differential efficiency, low threshold current and good electrical isolation characteristics. MeV oxygen ion implantation with optimum thermal annealing produces a deep buried electrical isolation layer in n-type GaAs and reduces optical absorption in GaAs/AlGaAs quantum well structures. Ion implantation stimulated compositional disordering as well as implanted oxygen-related deep level traps may be considered as important effects for electrical and optical modification of interfaces in GaAs and AlGaAs.
Additional Information
© 1989 Materials Research Society. This work was supported in part by the National Science Foundation [DMR86-15641] and the Office of Navy Research [Contract N00014-85-0032]. The assistance from M. Mittlstein in the optical measurement is acknowledged.Attached Files
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Additional details
- Eprint ID
- 51116
- Resolver ID
- CaltechAUTHORS:20141031-102240661
- NSF
- DMR86-15641
- Office of Naval Research (ONR)
- N00014-85-0032
- Created
-
2014-10-31Created from EPrint's datestamp field
- Updated
-
2021-11-10Created from EPrint's last_modified field
- Series Name
- Materials Research Society symposia proceedings
- Series Volume or Issue Number
- 144