Published November 1990
| public
Journal Article
Indium profiles in InGaAs with heavy ion RBS
Abstract
The indium profile of MBE-grown In_xGa_(1−x)As/GaAs single quantum well structures and In_xGa_(1−x)As layers on InAlAs buffer layers have been measured with heavy ion Rutherford backscattering using a time-of-flight detector. The depth resolution of the method is better than 30 Å at the sample surface using 15 MeV ^(35)Cl ions. The results for the average indium molar fraction are compared with photo reflectance measurements. The aluminum molar fraction in the InAlAs buffer layer has been profiled by nuclear reaction analysis.
Additional Information
© 1990 Elsevier Science Publishers B.V. Received 24 may 1990. Supported in part by the National Science Foundation (DMR88-11795). Supported in part by a fellowship from the Swiss National Science Foundation. M. Döbeli would like to express his gratitude towards the Swiss National Science Foundation for their financial support.Additional details
- Eprint ID
- 51024
- DOI
- 10.1016/0168-583X(90)90604-S
- Resolver ID
- CaltechAUTHORS:20141029-140713882
- DMR88-11795
- NSF
- Swiss National Science Foundation (SNSF)
- Created
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2014-10-29Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field