Cross-sectional and high resolution TEM studies of structural phase transitions in MeV-ion-implanted InP crystals
- Creators
- Xiong, Fulin
- Nieh, C. W.
- Tombrello, T. A.
Abstract
Cross-sectional and high resolution transmission electon microscopy (XTEM and HRTEM0 have been applied to investigate radiation damage and structural phase transitions in MeV-ion-implanted InP compound semiconductors. It has been found that the crystalline-amorphous transition in the implanted layer occurs at an implant dose over 1 × 10^(15)/cm^2, with the buried amorphous layer extending towards the sample surface as the implant dose increases. The recrystallization in the buried layer was stimulated through solid-phase epitaxy and homogeneous nucleation processes during thermal annealing at 500°C, resulting in a highly disordered structure. The results have led to a comprehensive understanding of mechecanisms of phase transitions in MeV-ion-implanted InP and complement the results of other characterization techniques.
Additional Information
© 1989 Elsevier Science Publishers B.V. Received at Editorial Office 6 December 1988; presented at Symposia August 1988. This issue of Ultramicroscopy contains invited and contributed papers from the symposia on grain boundaries and phase transformations which took place at the 46th Annual Meeting of EMSA in Milwaukee between August 7th and 12th, 1988. Supported in part by National Science Foundation [DMR84-21119].Additional details
- Eprint ID
- 50996
- DOI
- 10.1016/0304-3991(89)90192-7
- Resolver ID
- CaltechAUTHORS:20141029-101630220
- DMR 84-21119
- NSF
- Created
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2014-10-29Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field