Low-energy electron detection with delta-doped CCDs

Abstract

Delta-doped CCDs have achieved stable quantum efficiency, at the theoretical limit imposed by reflection from the Si surface in the near UV and visible. In this approach, an epitaxial silicon layer is grown on a fully-processed CCD using molecular beam epitaxy. During the silicon growth on the CCD, 30 percent of a monolayer of boron atoms are deposited nominally within a single atomic layer, resulting in the effective elimination of the backside potential well. In this paper, we will briefly discuss delta-doped CCDs and their application of low-energy electron detection. We show that modification of the surface this way can greatly improve sensitivity to low-energy detection. We show that modification of the surface this way can greatly improve sensitivity to low-energy electrons. Measurements comparing the response of delta-doped CCDs with untreated CCDs were made in the 50 eV-1.5 keV energy range.For electrons with energies below 300 eV, the signal from untreated CCDs was below the detection limit for our apparatus, and data are presented only for the response of delta-doped CCDs at these energies. The effects of multiple electron hole pair production and backscattering on the observed signals are discussed.

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