Published 1986
| public
Book Section - Chapter
Mechanical Properties of Ga_(1–x)In_xAs
- Creators
- Guruswamy, S.
- Hirth, J. P.
-
Faber, K. T.
- Others:
- Chiang, A.
- Geis, M. W.
- Pfeiffer, L.
Chicago
An error occurred while generating the citation.
Abstract
Substantial solid solution strengthening of GaAs by In acting as InAs_4 units has recently been predicted. This strengthening could account for the reduction of dislocation density in GaAs single crystals grown from the melt. High temperature hardness measurements up to 700ºC have been carried out on (100) GaAs and Ga_(0.9975)In_(0.0025)As wafers. Results show a significant strengthening effect in In-doped GaAs even at concentration levels of about 0.2 wt%. A temperature independent flow stress region is observed for both these alloys. The In-doped GaAs shows a higher plateau stress level compared to the undoped GaAs. The results are consistent with the solid solution strengthening model.
Additional Information
© Materials Research Society 1986. This work was initiated under NSF PYI award (DMR-8351476) in conjunction with IBM, Champion Spark Plug Co., Eastman Kodak and Owens Corning Fiberglass. Current support is provided by AFOSR (Contract F49620-85-C-0129).Additional details
- Alternative title
- Mechanical Properties of Ga1–xInxAs
- Eprint ID
- 49761
- Resolver ID
- CaltechAUTHORS:20140916-213750146
- NSF
- DMR-8351476
- IBM Corp.
- Champion Spark Plug
- Eastman Kodak Corporation
- Owens Corning Fiberglass
- Air Force Office of Scientific Research (AFOSR)
- F49620-85-C-0129
- Created
-
2014-09-17Created from EPrint's datestamp field
- Updated
-
2021-11-10Created from EPrint's last_modified field
- Series Name
- Materials Research Society Symposium Proceedings
- Series Volume or Issue Number
- 53