Optimization of the carrier concentration in phase-separated half-Heusler compounds
Abstract
Inspired by the promising thermoelectric properties of phase-separated half-Heusler materials, we investigated the influence of electron doping in the n-type Ti_(0.3−x)Zr_(0.35)Hf_(0.35)NiSn compound. The addition of Nb to this compound led to a significant increase in its electrical conductivity, and shifted the maximum Seebeck coefficient to higher temperatures owing to the suppression of intrinsic carriers. This resulted in an enhancement of both the power factor α^2σ and figure of merit, zT. The applicability of an average effective mass model revealed the optimized electron properties for samples containing Nb. There is evidence in the literature that the average effective mass model is suitable for estimating the optimized carrier concentration of thermoelectric n-type half-Heusler compounds.
Additional Information
© 2014 The Royal Society of Chemistry. Received 13th June 2014; Accepted 20th June 2014; First published online 23 Jun 2014. J.K and J.S gratefully acknowledge the German BMBF joint project TEG 2020 and G.J.S the Bosch-Bern program for their funding. We also thank Sylvia Kostmann and Rolf Stinshoff for electron microscope measurements.Attached Files
Published - c4ta03000a.pdf
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Additional details
- Eprint ID
- 49613
- Resolver ID
- CaltechAUTHORS:20140911-133312346
- TEG 2020
- German BMBF Joint Project
- Bosch-Bern Program
- Created
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2014-09-11Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field