Influence of solute doping on the high-temperature deformation behavior of GaAs

Abstract

The role of isovalent dopants in the high‐temperature deformation of GaAs has been studied in the temperature range 500–1150 °C. Additions of In, Sb, and B increase the critical resolved shear stress for deformation at a given strain rate and result in lowering the dislocation density of as‐grown liquid‐encapsulated Czochralski GaAs crystals. Phosphorus, because of its minor influence on the lattice strain, shows little enhancement of the yield stress. These results are consistent with a solute hardening model, in which the solute atom surrounded tetrahedrally by four Ga or As atoms comprise the hardening cluster. Codoping with In and Si hardens GaAs, but codoping with Si is less effective than the isovalent solutes In, Sb, and B, and produces softening at high temperatures. The effect of solutes on both dislocation nucleation and multiplication are reviewed here.

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