Anomalous Electrical Resistivity of Barely Delocalized Electrons

Abstract

We observe a maximum near 200 K in the zero frequency resistivity of Si:P doped et about twice the Mott density and in the dirty metal limit where the Fermi wave vector times the mean free path is of order 1 . The peak indicates a strong T-variation of the screening length, but the T-behavior down to 40 mK shows no evidence of the resistivity minimum predicted for a three-dimensional metal with interference between electron-electron and electron-impurity scattering.

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