Published September 1980
| public
Journal Article
Non-ohmic conductivity of barely localized electrons in three dimensions
- Creators
-
Rosenbaum, T. F.
- Andres, K.
- Thomas, G. A.
Abstract
We observe a rapid temperature variation and an electric field dependence of the d.c. conductivity in a carefully characterized sample of P doped Si. These results, combined with measurements of Raman scattering, far-infrared absorption and magnetic susceptibility, indicate a large characteristic electronic length (10^4 times the donor Bohr radius) at a donor concentration just below the critical density of the metal-insulator transition.
Additional Information
Copyright © 1980 Published by Elsevier. (Received 7 May 1980 by A. G. Chynoweth) We would like to acknowledge helpful discussions with P. W. Anderson, P. A. Lee, M. Pollak, T. V. Ramakrishnan, T. M. Rice, and particularly with R. N. Bhatt. We also thank W. Sasaki for a series of useful communications.Additional details
- Eprint ID
- 47063
- DOI
- 10.1016/0038-1098(80)90869-8
- Resolver ID
- CaltechAUTHORS:20140707-163043262
- Created
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2014-07-11Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field