Published November 24, 1980
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Journal Article
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Sharp Metal-Insulator Transition in a Random Solid
Abstract
Zero-temperature metallic conductivities have been measured above and below Mott's minimum value σ_(min) in bulk crystals of P-doped Si. Conductivities below σ_(min) increase by over 10^3 as the density is raised by less than 1%, and do not rule out a discontinuous transition. However, over a wider density range the data can be fitted with a scaling form with a characteristic length that tends to diverge with the same exponent in the metal and insulator.
Additional Information
© 1980 The American Physical Society. Received 30 June 1980. We would like to acknowledge helpful discussions with P. W. Anderson, E. I. Blount, R. C. Dynes, D.S. Fisher, P.A. Lee, T. V. Ramakrishnan, T. M. Rice, J. M. Howell, and C. M. Varma.Attached Files
Published - PhysRevLett.45.1723.pdf
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PhysRevLett.45.1723.pdf
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