Published February 23, 1981
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Journal Article
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Conductivity Cusp in a Disordered Metal
Abstract
A tendency toward a cusp at zero temperature in the electrical conductivity of Si crystals doped with P is observed. It is found that, within the metallic state, decreasing P concentration enhances the cusp and then rapidly changes its sign as a pseudogap opens. Such a cusp has been predicted for a disordered metal in which Coulomb interactions dominate the scattering.
Additional Information
© 1981 The American Physical Society. (Received 27 October 1980) We would like to acknowledge helpful discussions with P. W. Anderson, R. N. Bhatt, E. I. Blount, and T. M. Rice, and technical assistance from Frank DeRosa.Attached Files
Published - PhysRevLett.46.568.pdf
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PhysRevLett.46.568.pdf
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