Published December 14, 1981
| Published
Journal Article
Open
Low-Temperature Magnetoresistance of a Disordered Metal
Abstract
A contribution to the magnetoresistance is observed at temperatures below 100 mK in bulk metallic Si: P that is unanticipated within theoretical analyses of localization. This contribution is positive, approximately independent of sample orientation, and varying roughly as the square root of the applied field. An analysis of Coulomb interactions including spin splitting is presented which, when combined with localization, describes the magnetoresistance.
Additional Information
© 1981 The American Physical Society. Received 21 May 1981. We would like to thank J. B. Mock and P. H. Schmidt for technical assistance and A. Kawabata for helpful discussions. This work was partially supported by Grant No. DMR-79-04141 from the National Science Foundation.Attached Files
Published - PhysRevLett.47.1758.pdf
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PhysRevLett.47.1758.pdf
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Additional details
- Eprint ID
- 47058
- Resolver ID
- CaltechAUTHORS:20140707-163042716
- DMR-79-04141
- NSF
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2014-07-09Created from EPrint's datestamp field
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2021-11-10Created from EPrint's last_modified field