Sharp Metal-Insulator Transition in a Random Solid

Abstract

We have measured zero temperature metallic conductivities above and below Mott's minimum value σ_(MIN) in bulk crystals of P doped Si. Studies of lattice heating, electronic heating and macroscopic inhomogeneities support the finding that conductivities below σ_(MIN) increase by over 10 as the P density is increased by 1%, and that over a wider density range the data can be fit t o a scaling form with a characteristic length that tends to diverge with the same exponent (ν = 0.55±0.10) in the metal and insulator.

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