Published November 14, 1983
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Journal Article
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Critical Scaling of the Conductance in a Disordered Insulator
Abstract
A critical scaling of the real and imaginary parts of the low-frequency ac conductance of insulating phosphorus-doped silicon near the metal-insulator transition has been observed. The results are interpreted as evidence of an electron glass, i.e., glasslike behavior, intimately connected with the scaling description of the transition, in which Coulomb interactions play a significant role.
Additional Information
© 1983 The American Physical Society. (Received 26 August 1983) We would like to thank P. W. Anderson, J. J. Hauser, P. A. Lee, and T. V. Ramakrishnan for helpful discussions.Attached Files
Published - PhysRevLett.51.1896.pdf
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PhysRevLett.51.1896.pdf
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