Magnetic-Field-Induced Localization Transition in HgCdTe

Creators: Rosenbaum, T. F.; Field, Stuart B.; Nelson, D. A.; Littlewood, P. B.

Abstract

We have performed magnetoresistance and Hall-resistance measurements on low-carrier-concentration n-type samples of Hg_(0.76)Cd_(0.24)Te at millikelvin temperatures. We observe an abrupt rise in the Hall resistance and magnetoresistance at a characteristic field H_c which is a significant function of temperature and which allows us to reject magnetic freezeout or localization by disorder as possible mechanisms. We believe our data provide compelling evidence for a model where the magnetic field induces localization of the electrons into a three-dimensional Wigner lattice.

Additional Information

© 1985 The American Physical Society. Received 17 September 1984. We would like to thank R. N. Bhatt, H. Fukuyama, and Y. Iye for helpful discussions and especially P. M. Platzman, for first simulating our interest in this subject. The work was supported in part by the National Science Foundation under Grant No. DMR83-05065. Rosenbaum et al. respond. PRL 55 (4):444, 22 July 1985.

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Published - PhysRevLett.54.241.pdf

Published - PhysRevLett.55.444.pdf

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