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Published December 1, 1993 | Published
Journal Article Open

Mass enhancement and magnetic order at the Mott-Hubbard transition

Abstract

We study the evolution with pressure P and band filling y of the heat capacity, Hall coefficient, and resistivity at the approach to the T→0 Mott-Hubbard metal-insulator transition (MIT) in highly correlated V_(2-y)O_3. Under P, the electronic effective mass m* diverges at the MIT with a negligible change in carrier concentration n away from half-filling. Conversely, in the doped system m* actually decreases as the MIT is approached, while n increases linearly with y. The low-T magnetic order in the metal helps us deconvolute contributions from charge correlations and spin fluctuations.

Additional Information

© 1993 The American Physical Society. Received 7 September 1993. We are grateful to G. Zimanyi for helpful discussions. The work at the University of Chicago was supported by NSF Contract No. DMR92-04820. J.M.H. and J.S. were supported on MISCON Grant No. DE-FG02-90ER45427.

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Published - PhysRevB.48.16841.pdf

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