Published March 27, 2000
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Magnetoresistance in n- and p-type Ag_2Te: Mechanisms and applications
Abstract
We compare the large magnetoresistive response of slightly nonstoichiometric Ag_(2±δ)Te for a wide range of hole (p⩽8×10^(17) cm^(−3)) and electron (n⩽4×10^(18) cm^(−3))carrier densities. In the p-type material alone, a characteristic peak in the resistivity ρ(T,H) is dramatically enhanced and moves to higher temperature with increasing magnetic field, resulting in a high field (H∼5 T) magnetoresistance that is sizeable even at room temperature. By contrast, n-type specimens are geared for low-field (H<0.1 T) applications because of a striking linear field dependence of the magnetoresistance that appears to be restricted to the Ag-rich materials.
Additional Information
© 2000 American Institute of Physics. (Received 23 November 1999; accepted for publication 29 January 2000) The authors are grateful to A. Abrikosov, J. E. Enderby, and D. L. Price for illuminating discussions. The work at the University of Chicago was supported by U.S. Department of Energy Grant No. DE-FG02-99ER45789. The work at ANL was supported by the U.S. Department of Energy, Division of Materials Sciences, Office of Basic Energy Sciences, under Contract No. W-31-109-ENG-38. H.S. acknowledges support from the MRSEC Program of the National Science Foundation under Award No. DMR-9808595.Attached Files
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Additional details
- Alternative title
- Magnetoresistance in n- and p-type Ag2Te: Mechanisms and applications
- Eprint ID
- 46974
- Resolver ID
- CaltechAUTHORS:20140707-163031805
- Department of Energy (DOE)
- DE-FG02-99ER45789
- Department of Energy (DOE)
- W-31-109-ENG-38
- NSF
- DMR-9808595
- Created
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2014-07-08Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field