Published March 12, 2003
| Published
Journal Article
Open
Scaling at the Mott-Hubbard metal-insulator transition in yttrium hydride
Abstract
A single yttrium hydride thin film is conveniently driven through the T = 0 metal-insulator transition by fine-tuning the charge :carrier density n via persistent photoconductivity at low temperature. Simultaneously, electrical conductivity and Hall measurements are performed for temperatures T down to 350 mK and magnetic fields up to 14 T. A scaling analysis is applied and critical exponents, resolved separately on the metallic and insulating sides of the critical region, are determined consistently. We introduce corrections to scaling to invoke collapse of the data onto a single master curve over an extended region of the (n, T) phase diagram.
Additional Information
© 2003 IOP Publishing. Received 14 January 2003; Published 24 February 2003. We are grateful to R Griessen for his continuing interest and scientific cooperation. This work was supported by the Royal Netherlands Academy of Arts and Sciences, the Dutch Stichting voor Fundamenteel Onderzoek der Materie and by the National Science Foundation under Grant DMR-0114798.Attached Files
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Additional details
- Eprint ID
- 46958
- Resolver ID
- CaltechAUTHORS:20140707-163029232
- Royal Netherlands Academy of Arts and Sciences
- Stichting voor Fundamenteel Onderzoek der Materie (FOM)
- NSF
- DMR-0114798
- Created
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2014-07-08Created from EPrint's datestamp field
- Updated
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2022-07-12Created from EPrint's last_modified field