Scaling at the Mott-Hubbard metal-insulator transition in yttrium hydride

Abstract

A single yttrium hydride thin film is conveniently driven through the T = 0 metal-insulator transition by fine-tuning the charge :carrier density n via persistent photoconductivity at low temperature. Simultaneously, electrical conductivity and Hall measurements are performed for temperatures T down to 350 mK and magnetic fields up to 14 T. A scaling analysis is applied and critical exponents, resolved separately on the metallic and insulating sides of the critical region, are determined consistently. We introduce corrections to scaling to invoke collapse of the data onto a single master curve over an extended region of the (n, T) phase diagram.

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