Effect of dry oxidation on the energy gap and chemical composition of CVD graphene on nickel
- Creators
- Aria, Adrianus I.
- Gani, Adi W.
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Gharib, Morteza
Abstract
The findings presented herein show that the electronic properties of CVD graphene on nickel can be altered from metallic to semiconducting by introducing oxygen adsorbates via UV/ozone or oxygen plasma treatment. These properties can be partially recovered by removing the oxygen adsorbates via vacuum annealing treatment. The effect of oxidation is studied by scanning tunneling microscopy/spectroscopy (STM/STS) and X-ray photoelectron spectroscopy (XPS). As probed by STM/STS, an energy gap opening of 0.11–0.15 eV is obtainable as the oxygen/carbon atomic ratio reaches 13–16%. The corresponding XPS spectra show a significant monotonic increase in the concentration of oxygenated functional groups due to the oxidation treatments. This study demonstrates that the opening of energy gap in CVD graphene can be reasonably controlled by a combination of UV/ozone or oxygen plasma treatment and vacuum annealing treatment.
Additional Information
© 2013 Elsevier B.V. Received 10 October 2013; Received in revised form 19 November 2013; Accepted 21 November 2013;Available online 5 December 2013. The authors gratefully acknowledge support and infrastructure provided for this work by the Charyk Laboratory for Bioinspired Design, the Kavli Nanoscience Institute (KNI), and the Molecular Materials Research Center (MMRC) at the California Institute of Technology. The authors also acknowledge Professor George Rossman at the Division of Geological and Planetary Sciences of the California Institute of Technology for access to the Raman spectrometer. This work was supported by The Office of Naval Research under grant number N00014-11-1-0031 and The Fletcher-Jones Foundation under grant number 9900600.Attached Files
Supplemental Material - mmc1.docx
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Additional details
- Eprint ID
- 44175
- Resolver ID
- CaltechAUTHORS:20140306-101009555
- Office of Naval Research (ONR)
- N00014-11-1-0031
- The Fletcher-Jones Foundation
- 9900600
- Created
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2014-03-07Created from EPrint's datestamp field
- Updated
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2023-03-14Created from EPrint's last_modified field
- Caltech groups
- Kavli Nanoscience Institute, GALCIT