Published January 15, 2014
| Published
Journal Article
Open
Low-noise Brillouin laser on a chip at 1064 nm
- Creators
- Li, Jiang
- Lee, Hansuek
-
Vahala, Kerry J.
Chicago
Abstract
We demonstrate narrow-linewidth-stimulated Brillouin lasers at 1064 nm from ultra-high-Q silica wedge disk resonators on silicon. Fundamental Schawlow–Townes frequency noise of the laser is on the order of 0.1 Hz^2/Hz. The technical noise spectrum of the on-chip Brillouin laser is close to the thermodynamic noise limit of the resonator (thermorefractive noise) and is comparable to that of ultra-narrow-linewidth Nd:YAG lasers. The relative intensity noise of the Brillouin laser also is reduced by using an intensity-stabilized pump laser. Finally, low-noise microwave synthesis up to 32 GHz is demonstrated by heterodyne of first and third Brillouin Stokes lines from a single resonator.
Additional Information
© 2013 Optical Society of America. Received October 25, 2013; accepted November 15, 2013; posted December 3, 2013 (Doc. ID 200164); published January 8, 2014. We are grateful for financial support from the DARPA ORCHID and QUASAR programs, the Institute for Quantum Information and Matter (IQIM), the NSF Physics Frontiers Center with support of the Gordon and Betty Moore Foundation, and the Kavli NanoScience Institute.Attached Files
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Additional details
- Eprint ID
- 43714
- Resolver ID
- CaltechAUTHORS:20140207-085658118
- DARPA ORCHID Program
- DARPA QUASAR Program
- Institute for Quantum Information and Matter (IQIM)
- NSF Physics Frontiers Center
- Gordon and Betty Moore Foundation
- Kavli Nanoscience Institute
- Created
-
2014-02-11Created from EPrint's datestamp field
- Updated
-
2021-11-10Created from EPrint's last_modified field
- Caltech groups
- Institute for Quantum Information and Matter, Kavli Nanoscience Institute