A new crystal: layer-structured rhombohedral In_(3)Se_4

Abstract

A new layer-structured rhombohedral In_(3)Se_4 crystal was synthesized by a facile and mild solvothermal method. Detailed structural and chemical characterizations using transmission electron microscopy, coupled with synchrotron X-ray diffraction analysis and Rietveld refinement, indicate that In_(3)Se_4 crystallizes in a layered rhombohedral structure with lattice parameters of a = 3.964 ± 0.002 Å and c = 39.59 ± 0.02 Å, a space group of R3^(-)m with combining macron]m, and with a layer composition of Se–In–Se–In–Se–In–Se. The theoretical modeling and experimental measurements indicate that the In3Se4 is a self-doped n-type semiconductor. This study not only enriches the understanding on crystallography of indium selenide crystals, but also paves a way in the search for new semiconducting compounds.

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