Published July 2013
| public
Journal Article
Enhancement of the Thermoelectric Performance of Bi_(0.4)Sb_(1.6)Te_3 Alloys by In and Ga Doping
Chicago
Abstract
We report an enhancement of the thermoelectric figure of merit in polycrystalline In- and Ga-doped Bi_(0.4)Sb_(1.6)Te_3 compounds. Via the controlled doping of In or Ga, the lattice thermal conductivity was effectively reduced by strong point-defect phonon scattering while the power factor was not significantly changed due to the similarity of the density of states near the valence-band maximum between undoped and In- or Ga-doped compositions. An enhanced ZT of 1.2 at 320 K was obtained in 0.5 at.% In-doped Bi_(0.4)Sb_(1.6)Te_3 compound by these synergetic effects.
Additional Information
© 2012 TMS. Received July 6, 2012; accepted November 8, 2012; published online December 8, 2012.Additional details
- Eprint ID
- 39901
- DOI
- 10.1007/s11664-012-2356-3
- Resolver ID
- CaltechAUTHORS:20130813-143553118
- Created
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2013-08-13Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field