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Published May 14, 2013 | public
Journal Article Metadata-only

Structural and Optoelectronic Characterization of RF Sputtered ZnSnN_2

Lahourcade, Lise1
Coronel, Naomi C.1
Delaney, Kris T.2
Shukla, Sujeet K.1 ORCID icon
Spaldin, Nicola A.3
Atwater, Harry A.1 ORCID icon
  • 1. ROR icon California Institute of Technology
  • 2. ROR icon University of California, Santa Barbara
  • 3. ROR icon ETH Zurich
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Abstract

ZnSnN_2, a new earth-abundant semiconductor, is synthesized and characterized for use as a photovoltaic absorber material. Results confirm the predicted orthorhombic Pna2_1 crystal structure in RF sputtered thin films. Additionally, optical measurements reveal a direct bandgap of about 2 eV, which is larger than our calculated bandgap of 1.42 eV due to the Burstein-Moss effect.

Additional Information

© 2013 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Received: November 15, 2012; Revised: December 6, 2012; Published online: February 6, 2013. This work was supported in part by the US Department of Energy under grant DE-FG02-07ER46405, and in part by the DOW Chemical Company.

Additional details

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Created:
August 22, 2023
Modified:
April 23, 2025