Published May 14, 2013
| public
Journal Article
Structural and Optoelectronic Characterization of RF Sputtered ZnSnN_2
Abstract
ZnSnN_2, a new earth-abundant semiconductor, is synthesized and characterized for use as a photovoltaic absorber material. Results confirm the predicted orthorhombic Pna2_1 crystal structure in RF sputtered thin films. Additionally, optical measurements reveal a direct bandgap of about 2 eV, which is larger than our calculated bandgap of 1.42 eV due to the Burstein-Moss effect.
Additional Information
© 2013 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Received: November 15, 2012; Revised: December 6, 2012; Published online: February 6, 2013. This work was supported in part by the US Department of Energy under grant DE-FG02-07ER46405, and in part by the DOW Chemical Company.Additional details
- Eprint ID
- 38832
- DOI
- 10.1002/adma.201204718
- Resolver ID
- CaltechAUTHORS:20130606-102503382
- DE-FG02-07ER46405
- Department of Energy (DOE)
- Dow Chemical Company
- Created
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2013-06-25Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field