Published April 1, 2013
| public
Journal Article
Synthesis and enhanced light-emission of Si nanocrystals embedded in silicon oxide nanowires
Abstract
In this paper, we report the synthesis of silicon oxide nanowire-embedded silicon (SONW-Si) nanocrystals (NCs) and their light emission characteristics. The SONW-Si NCs were formed by thermally annealing silicon-rich oxide nanowires (NWs) grown at low temperatures. The well-defined Si NCs were found to have grown in (111) direction and clearly displayed a higher density distribution at the center of the NWs. Photoluminescence (PL) measurements of the SONW-Si NCs showed an enhanced PL intensity compared to the silicon oxide film-embedded Si NCs, which may be related to the difference between the Si diffusion characteristics of SiO_x NWs and films.
Additional Information
© 2013 Elsevier B.V. Received 1 December 2012; Accepted 12 January 2013; Available online 31 January 2013. This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant no.: 2010-0021320).Additional details
- Eprint ID
- 38661
- DOI
- 10.1016/j.matlet.2013.01.067
- Resolver ID
- CaltechAUTHORS:20130523-134346493
- Basic Science Research Program
- NRF (Korea)
- 2010-0021320
- Ministry of Education, Science and Technology (MEST)
- NRF
- Created
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2013-05-31Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field