Graded Bit-Error-Correcting Codes With Applications to Flash Memory

Creators: Gabrys, Ryan; Yaakobi, Eitan; Dolecek, Lara

Abstract

Flash memory is a promising new storage technology. Supported by empirical data collected from a Flash memory device, we propose a class of codes that exploits the asymmetric nature of the error patterns in a Flash device using tensor product operations. We call these codes graded bit-error-correcting codes. As demonstrated on the data collected from a Flash chip, these codes significantly delay the onset of errors and therefore have the potential to prolong the lifetime of the memory device.

Additional Information

© 2013 IEEE. Manuscript received May 04, 2012; revised November 01, 2012; accepted November 29, 2012. Date of publication January 04, 2013; date of current version March 13, 2013. This work was supported in part by the SMART scholarship, in part by the National Science Foundation under Grants CCF-1029030 and CCF-1150212, in part by the International Sephardic Education Foundation, and in part by the Lester Deutsch Fellowship. This paper was presented in part at the 2012 IEEE International Symposium on Information Theory. The authors would like to thank Ms. Laura Grupp for her help with the data collection. The authors thank the anonymous reviewers for their expert comments that have help us to significantly improve the results section. We also thank Associate Editor, Prof. Olgica Milenkovic for a timely handling of our paper.

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Graded Bit-Error-Correcting Codes With Applications to Flash Memory

Abstract

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