Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions
Abstract
The electrical properties of nanowire-based n-InSb-n-InAs heterojunctions were investigated theoretically and experimentally. Analysis of the current-voltage characteristics showed that the current through the heterojunction is caused mostly by generation-recombination processes in the InSb and at the heterointerface. Due to the partially overlapping valence band of InSb and the conduction band of InAs, the second process is fast and activationless. Theoretical analysis showed that, depending on the heterojunction parameters, the flux of non-equilibrium minority carriers may have a different direction, explaining the experimentally observed non-monotonic coordinate dependence of the electron beam induced current.
Additional Information
© 2013 American Institute of Physics. Received 6 December 2012; accepted 25 February 2013; published online 12 March 2013. Authors A.S., C.Y.C., and H.E.R. gratefully acknowledge support for this work from NSERC, CIPI, CSA, OCE, and NCE. A.P. acknowledges funding from European Union through Marie Curie Actions under REA Grant Agreement No. 298861 (NEMO).Attached Files
Published - JApplPhys_113_104307.pdf
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Additional details
- Eprint ID
- 38094
- Resolver ID
- CaltechAUTHORS:20130424-104758990
- NSERC (Canada)
- CIPI
- CSA
- OCE
- NCE
- 298861
- European Union Marie Curie Actions
- Created
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2013-04-24Created from EPrint's datestamp field
- Updated
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2023-10-23Created from EPrint's last_modified field