Published January 21, 2013
| Published
Journal Article
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Thermal stress in silica-on-silicon disk resonators
- Creators
- Chen, Tong
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Lee, Hansuek
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Vahala, Kerry J.
Abstract
The thermal expansion mismatch of thermal grown silica on a silicon wafer is well known to induce compressive stress upon cooling from the growth temperature to room temperature. In this Letter, we investigate how this stress impacts silica disk structures by comparison of measurements with both a finite element and an analytical model. The disk structures studied are also whispering gallery optical resonators, and proper control of stress is critical to obtain high-Q resonances. Based on our analysis, thicker oxide layers and proper control of undercut enable ultra-high-Q optical performance and mechanical stability.
Additional Information
© 2013 American Institute of Physics. Received 4 December 2012; accepted 8 January 2013; published online 24 January 2013. We gratefully acknowledge the Defense Advanced Research Projects Agency under the iPhoD program, the Institute for Quantum Information and Matter, an NSF Physics Frontiers Center with support of the Gordon and Betty Moore Foundation, and also the Kavli Nanoscience Institute at Caltech. H.L. thanks the Center for the Physics of Information.Attached Files
Published - ApplPhysLett_102_031113.pdf
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ApplPhysLett_102_031113.pdf
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Additional details
- Eprint ID
- 37157
- Resolver ID
- CaltechAUTHORS:20130226-152436926
- Gordon and Betty Moore Foundation
- Kavli Nanoscience Institute
- Defense Advanced Research Projects Agency (DARPA)
- Institute for Quantum Information and Matter (IQIM)
- NSF Physics Frontiers Center
- Created
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2013-02-26Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field
- Caltech groups
- Kavli Nanoscience Institute, Institute for Quantum Information and Matter