Towards an optimized all lattice-matched InAlAs/InGaAsP/InGaAs multijunction solar cell with efficiency >50%
Abstract
An approach for an all lattice-matched multijunction solar cell optimized design is presented with 5.807 Å lattice constant, together with a detailed analysis of its performance by means of full device modeling. The simulations show that a (1.93 eV)In_(0.37)Al_(0.63)As/(1.39 eV)In_(0.38)Ga_(0.62)As_(0.57)P_(0.43)/(0.94 eV)In_(0.38)Ga_(0.62)As 3-junction solar cell can achieve efficiencies >51% under 100-suns illumination (with V_(oc) = 3.34 V). As a key proof of concept, an equivalent 3-junction solar cell lattice-matched to InP was fabricated and tested. The independently connected single junction solar cells were also tested in a spectrum splitting configuration, showing similar performance to a monolithic tandem device, with V_(oc) = 1.8 V.
Additional Information
© 2013 American Institute of Physics. (Received 14 September 2012; accepted 26 September 2012; published online 22 January 2013) The authors acknowledge M. J. Archer, M. D. Kelzenberg, R. R. King, and financial support from the Department of Energy—Solar Energy Technologies Program under Grant No. DE-FG36-08GO18071. MSL acknowledges support under the Cooperative Research Agreement between the University of Maryland and the National Institute of Standards and Technology Center for Nanoscale Science and Technology, award 70NANB10H193, through the University of Maryland.Attached Files
Published - ApplPhysLett_102_033901.pdf
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Additional details
- Eprint ID
- 37074
- Resolver ID
- CaltechAUTHORS:20130222-102008426
- DE-FG36-08GO18071
- Department of Energy (DOE)
- 70NANB10H193
- National Institute of Standards and Technology (NIST)
- Created
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2014-11-03Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field