Published December 2012
| Published
Journal Article
Open
Measurement of the electrical resistivity and Hall coefficient at high temperatures
Chicago
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Abstract
The implementation of the van der Pauw (VDP) technique for combined high temperature measurement of the electrical resistivity and Hall coefficient is described. The VDP method is convenient for use since it accepts sample geometries compatible with other measurements. The technique is simple to use and can be used with samples showing a broad range of shapes and physical properties, from near insulators to metals. Three instruments utilizing the VDP method for measurement of heavily doped semiconductors, such as thermoelectrics, are discussed.
Additional Information
© 2012 American Institute of Physics. Received 25 June 2012; accepted 21 November 2012; published online 14 December 2012. We gratefully acknowledge the assistance of the NASA JPL thermoelectrics group for design, initial development, and testing, as well as funding for this project. The work was supported by the Danish National Research Foundation (Center for Materials Crystallography) and the Danish Strategic Research Council (Center for Energy Materials). E.S.T. acknowledges support from the U.S. National Science Foundation (NSF) MRSEC program—REMRSEC Center, Grant No. DMR-0820518. G.J.S acknowledges support of Fred Harris and others at BSST/Amerigon during the fabrication of the Caltech system.Attached Files
Published - RevSciInstrum_83_123902.pdf
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RevSciInstrum_83_123902.pdf
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Additional details
- Eprint ID
- 36891
- Resolver ID
- CaltechAUTHORS:20130213-080100624
- NASA/JPL
- Danish National Research Foundation
- Danish Strategic Research Council
- NSF MRSEC Program
- DMR-0820518
- Created
-
2013-02-13Created from EPrint's datestamp field
- Updated
-
2021-11-09Created from EPrint's last_modified field
- Other Numbering System Name
- International Patent Classification (IPC)
- Other Numbering System Identifier
- G01R