Published June 2011
| public
Book Section - Chapter
First demonstration of monolithic InP-based InAlAs/InGaAsP/InGaAs triple junction solar cells
Chicago
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Abstract
Spectrolab has demonstrated the first lattice matched InAlAs/InGaAsP/InGaAs triple junction solar cell grown on InP substrate. X-ray diffraction characterization shows high quality solar cell materials. Preliminary 1-sun AM1.5D testing of the triple junction solar cell shows promising results with an open circuit voltage (V_(oc)) of 1.8V, a short-circuit current density (J_(sc)) of 11.0 mA/cm^2, a fill factor of 64.4%, and a 1-sun AM1.5D efficiency of 13.8%. The same cell also passes 27-suns under concentration. Improvements in layer design and crystal quality of advanced features can further raise the 1-sun and concentrated AM1.5D conversion efficiency of the InP-based triple junction cell beyond 20%.
Additional Information
© 2011 IEEE. Date of Current Version: 19 April 2012. The authors are grateful for financial support from the Department of Energy - Solar Energy Technologies Program under Grant No. DE-FG36-08GO18071.Additional details
- Eprint ID
- 35621
- Resolver ID
- CaltechAUTHORS:20121126-093935898
- Department of Energy (DOE)
- DE-FG36-08GO18071
- Created
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2012-11-26Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field
- Caltech groups
- Kavli Nanoscience Institute