Quantum dots in photonic crystal cavities

Abstract

During the past two decades, the development of micro- and nano-fabrication technologies has positively impacted multiple areas of science and engineering. In the photonics community, these technologies had numerous early adopters, which led to photonic devices that exhibit features at the nano-scale and operate at the most fundamental level of light–matter interaction [28, 39, 18, 29]. One of the leading platforms for these types of devices is based on gallium arsenide (GaAs) planar photonic crystals (PC) with embedded indium arsenide (InAs) quantum dots (QDs). The PC architecture is advantageous because it enables monolithic fabrication of photonic networks for efficient routing of light signals of the chip [26]. At the same time, PC devices have low loss and ultra-small optical mode volumes, which enable strong light–matter interactions. The InAs quantum dots are well suited for quantum photonic applications because they have excellent quantum efficiencies, large dipole moments, and a variety of quantum states that can be optically controlled [24, 3].

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