Published June 2012
| public
Book Section - Chapter
Earth-abundant ZnSn_xGe_(1−x)N_2 alloys as potential photovoltaic absorber materials
Chicago
Abstract
Large-scale energy demands will require low-cost, earth-abundant materials for high efficiency solar energy conversion. Here we present ZnSn_xGe_(1−x)N_2 as a tunable band gap photovoltaic absorber layer with a predicted range of 1.4 eV to 2.9 eV. Thin films of ZnSn_xGe_(1−x)N_2 are synthesized by reactive RF co-sputtering with a wide range of compositions. X-ray diffraction shows a linear shift in lattice parameter with changing composition, indicating no phase separation. These results suggest that ZnSn_xGe_(1−x)N_2 can potentially be tuned to span a large portion of the solar spectrum and could therefore be a viable earth-abundant photovoltaic material.
Additional Information
© 2011 IEEE. Date of Current Version: 04 October 2012. The authors would like to acknowledge funding from the US Department of Energy under grant DE-FG02-07ER46405 and from the DOW Chemical Company.Additional details
- Eprint ID
- 34833
- Resolver ID
- CaltechAUTHORS:20121010-145544413
- Department of Energy (DOE)
- DE-FG02-07ER46405
- Dow Chemical Company
- Created
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2012-10-11Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field