Published October 9, 2012
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Book Section - Chapter
Enhanced performance of small GaAs solar cells via edge and surface passivation with trioctylphosphine sulfide
Abstract
We have extended our previous work on trioctylphosphine sulfide (TOP:S) to further elucidate the mechanisms of this chemical passivation for small GaAs solar cells. Photoluminescence (PL) measurements indicate monolayers of TOP:S on GaAs significantly increases the electronic quality of both n- and p-doped wafers. TOP:S was also applied to an "ultra small" GaAs solar cell (0.31 mm^2) to test its ability to passivate devices with the relevant dimensions for microconcentrator schemes. After the cells were briefly soaked in TOP:S, the efficiency of the cell was boosted by 1% (absolute), even after a rinse in toluene to remove all but a few monolayers of TOP:S, confirming sidewall passivation.
Additional Information
© 2011 IEEE. Date of Current Version: 04 October 2012. This work was supported by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895 and the Department of Defense (DoD) through the National Defense Science & Engineering Graduate Fellowship (NDSEG) Program. The authors thank Dr. Brendan Kayes and Alta Devices for providing the GaAs cells used in this study.Additional details
- Eprint ID
- 34790
- DOI
- 10.1109/PVSC.2012.6317756
- Resolver ID
- CaltechAUTHORS:20121009-115041121
- NSF
- Department of Energy (DOE)
- EEC-1041895
- NSF
- National Defense Science and Engineering Graduate (NDSEG) Fellowship
- Created
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2012-10-09Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field