A High Power Frequency-Stabilized Tunable Two-Frequency Diode Laser System for the Generation of Coherent THz-Waves by Photomixing
Abstract
A tunable two-frequency high-power diode laser system at 850 nm for terahertz (Thz)-wave generation by photomixing in low-temperature-grown GaAs photo-conductors has been developed. The difference frequency is obtained through a three laser system, where two lasers are locked to different orders of a Fabry-Perot cavity and a third is offset-locked to the first, The difference-frequency signal is generated by the offset laser and the other cavity-locked laser. The spectral purity of the beat note is better than 1 MHz. The maximum output power of -500 mW was obtained by using the master oscillator power amplifier (MOPA) technique, simultaneous injection of two seed frequencies with a single semiconductor optical amplifier. Here we report the generation of THz waves and spectroscopy of acetonitrile as proof of concept.
Additional Information
© 1998 Associated Universities, Inc. The National Radio Astronomy Observatory is a facility of the National Science Foundation operated under cooperative agreement by Associated Universities, Inc. We thank T. J. Crawford of Jet Propulsion Laboratory for his technical support. This work was supported by the National Aeronautics and Space Administration.Attached Files
Published - Matsuura_445.pdf
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- CaltechAUTHORS:20121002-105657742
- NASA
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2012-10-02Created from EPrint's datestamp field
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2022-11-01Created from EPrint's last_modified field
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- Division of Geological and Planetary Sciences (GPS)