High-brightness single photon source from a quantum dot in a directional-emission nanocavity
Abstract
We analyze a single photon source consisting of an InAs quantum dot coupled to a directional-emission photonic crystal (PC) cavity implemented in GaAs. On resonance, the dot's lifetime is reduced by more than 10 times, to 45ps. Compared to the standard three-hole defect cavity, the perturbed PC cavity design improves the collection efficiency into an objective lens (NA = 0.75) by factor 4.5, and improves the coupling efficiency of the collected light into a single mode fiber by factor 1.9. The emission frequency is determined by the cavity mode, which is antibunched to g^(2)(0) = 0.05. The cavity design also enables efficient coupling to a higher-order cavity mode for local optical excitation of cavity-coupled quantum dots.
Additional Information
© 2009 Optical Society of America. Received 31 Mar 2009; revised 26 May 2009; accepted 29 Jun 2009; published 4 Aug 2009. Financial support was provided by the Army Research Office, ONR Young Investigator Award, Presidential Early Career Award, and the National Science Foundation. We specially thank to Nick Stoltz, Pierre Petroff in University of California, Santa Barbara, for growing the QDs embedded wafers.Attached Files
Published - oe-17-17-14618.pdf
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Additional details
- Eprint ID
- 34151
- Resolver ID
- CaltechAUTHORS:20120917-142528241
- Army Research Office (ARO)
- Office of Naval Research (ONR)
- NSF
- Created
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2012-09-17Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field