Published December 1, 1968
| Published
Journal Article
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Noise and Equivalent Circuit of Double Injection
Chicago
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Abstract
Measurements of the high‐frequency noise of a silicon double‐injection diode result in 〈i^2〉 = α⋅4kT(1/r)Δf with α=1.04 and in agreement with the literature. A new interpretation demands Nyquist noise with α≡1 in these devices at high frequencies. This is in accord with an equivalent circuit derived for the double‐injection process. Speculations are made on the general validity of Nyquist noise in nonlinear devices at high frequencies. In addition, generation‐recombination noise is suggested as the prime source of the low‐frequency noise.
Additional Information
© 1969 The American Institute of Physics. Received 5 August 1968. Online Publication Date: 9 December 2003. Our acknowledgments go to the Naval Ordnance Test Station, Pasadena, California; the Jet Propulsion Laboratory, Pasadena, California; and the NASA Electronics Research Center, Cambridge, Massachusetts, all of whom supported phases of this work. We thank N. Haralambis for much help in the assembly of electronic equipment and data reduction and Dr. R. Baron for enlightening discussions. The double-injection diode was generously provided by O. J. Marsh, Hughes Research Laboratories, Malibu, CaliforniaAttached Files
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Additional details
- Eprint ID
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- CaltechAUTHORS:20120827-112350834
- Naval Ordnance Test Station
- JPL
- NASA Electronics Research Center
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2012-08-27Created from EPrint's datestamp field
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2021-11-09Created from EPrint's last_modified field