Noise and Equivalent Circuit of Double Injection

Abstract

Measurements of the high‐frequency noise of a silicon double‐injection diode result in 〈i^2〉 = α⋅4kT(1/r)Δf with α=1.04 and in agreement with the literature. A new interpretation demands Nyquist noise with α≡1 in these devices at high frequencies. This is in accord with an equivalent circuit derived for the double‐injection process. Speculations are made on the general validity of Nyquist noise in nonlinear devices at high frequencies. In addition, generation‐recombination noise is suggested as the prime source of the low‐frequency noise.

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