Published April 27, 2012
| public
Journal Article
The study of graphite disordering using the temperature dependence of ion-induced electron emission
Abstract
The temperature dependences of ion-induced electron emission yield γ(T) under 6–30 keV N_2^+, Ne^+, Ar^+ and 15 keV N^+ high-fluence ion irradiation of polycrystalline graphite at normal ion incidence have been analyzed to trace the structure change dependence depending on irradiation temperature and the level of radiation damage v measured in dpa (displacements per atom). It has been found that, under irradiation at room temperature, the threshold value for graphite lattice disordering equals v_d ≈ 60 dpa for noble gas ions (Ar^+, Ne^+) and ν_d ≈ 40 dpa for N_2^+.
Additional Information
© 2011 Elsevier. Available online 17 December 2011. Selected papers from the 20th Conference on Ion-Surface Interactions, Zvenigorod, Moscow Region 25 – 29 August 2011. This work is supported by the Ministry of Education and Science of the Russian Federation (Contract No. 02.740.11.0389).Additional details
- Eprint ID
- 33116
- Resolver ID
- CaltechAUTHORS:20120813-093420024
- 02.740.11.0389
- Ministry of Education and Science of the Russian Federation
- Created
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2012-08-13Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field