Published August 1974
| Published
Journal Article
Open
Kinetics of silicide formation by thin films of V on Si and SiO_2 substrates
- Creators
- Kräutle, H.
- Nicolet, M-A.
- Mayer, J. W.
Chicago
An error occurred while generating the citation.
Abstract
The reaction rate of vacuum‐evaporated films of V of the order of 1000 Å thick is investigated by MeV He backscattering spectrometry. On substrates of single‐crystal Si and for anneal times up to several hours in the temperature range 570–650°C, VSi_2 is formed at a linear rate in time. The activation energy of the process is 1.7±0.2 eV. The presence of oxygen in amounts of 10% can significantly decelerate the reaction. On substrates of SiO_2 in the temperature range 730–820°C and anneal times of several hours or less, V_3Si is formed at a square‐root rate in time. The activation energy of this process is 2.0±0.2 eV.
Additional Information
© 1974 American Institute of Physics. Received 6 February 1974. The authors acknowledge helpful discussions with W. K. Chu and J. O. McCaldin. They also thank K.-N. Tu, of IBM, Thomas J. Watson Research Center, for his collaboration and the x-ray analyses of silicide films. Work supported by the Air Force Cambridge Research Laboratory (D. E. Davies).Attached Files
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Additional details
- Eprint ID
- 33050
- Resolver ID
- CaltechAUTHORS:20120809-110703213
- Air Force Cambridge Research Laboratories
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2012-08-09Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field