Published July 1, 1976
| Published
Journal Article
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Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride
Chicago
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Abstract
The Schottky barriers formed on n‐ZnS and n‐ZnSe by polymeric sulfur nitride have been compared to barriers formed by Au. Barrier energies as determined by photoresponse, current‐voltage, and capacitance‐voltage methods show that (SN)_x is approximately 1.0 eV higher than Au on n‐ZnS and 0.3–0.4 eV higher than Au on n‐ZnSe. We believe that this is the first report of any metallic contact more electronegative than Au.
Additional Information
© 1976 American Institute of Physics. Received 19 March 1976. Work supported in part by the Office of Naval Research (D. Ferry).Attached Files
Published - SCRapl76.pdf
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Additional details
- Eprint ID
- 33020
- Resolver ID
- CaltechAUTHORS:20120808-132551604
- Office of Naval Research (ONR)
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2012-08-08Created from EPrint's datestamp field
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2021-11-09Created from EPrint's last_modified field