Published August 15, 1977
| Published
Journal Article
Open
Double-heterostructure GaAs-GaAIAs injection lasers on semi-insulating substrates using carrier crowding
- Creators
- Lee, C. P.
- Margalit, S.
- Yariv, A.
Chicago
An error occurred while generating the citation.
Abstract
GaAs‐GaAlAs double‐heterostructure lasers were fabricated on semi‐insulating substrates. Laser action based on carrier confinement via the crowding effect has been demonstrated. Laser action takes place in a narrow (10–20 μm) region near the edge of the mesa where the current is injected. The threshold current is low and is comparable to that of stripe‐geometry lasers.
Additional Information
© 1977 American Institute of Physics. Received 25 April 1977; accepted for publication 8 June 1977. Online Publication Date: 26 August 2008. Work supported by the Office of the Naval Research and by the National Science Foundation.Attached Files
Published - LEEapl77b.pdf
Files
LEEapl77b.pdf
Files
(137.8 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:2e990844189c9a4f4cd155bf2c232732
|
137.8 kB | Preview Download |
Additional details
- Eprint ID
- 33008
- Resolver ID
- CaltechAUTHORS:20120808-093031240
- Office of Naval Research
- NSF
- Created
-
2012-08-08Created from EPrint's datestamp field
- Updated
-
2023-10-18Created from EPrint's last_modified field