Published July 1978
| Published
Journal Article
Open
Tight‐binding calculation for the AlAs–GaAs (100) interface
- Creators
- Schulman, J. N.
- McGill, T. C.
Chicago
An error occurred while generating the citation.
Abstract
We report the results of a study of the electronic properties of the AlAs–GaAs interface using the tight‐binding method. The tight‐binding matrix for the superlattice system is used in the limit in which the thickness of the repeated superlattice slab becomes large. This system is studied in detail with special emphasis placed on the determination of interface states. No interface states with energies within the GaAs forbidden gap are found. The densities of states per layer are calculated and compared with bulk densities of states. They resemble the bulk densities of states except for layers adjacent to the interface.
Additional Information
© 1978 American Vacuum Society. Received 10 March 1978; accepted 13 March 1978. The authors wish to acknowledge many useful discussions with D. L. Smith. Work was supported in part by ONR under Contract No. N00014-76-C-1068 and ARO under Contract No. DAAG29-77-C-0015.Attached Files
Published - SCHUjvst78.pdf
Files
SCHUjvst78.pdf
Files
(637.7 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:15931606cfd9f503a781c1604f216c5d
|
637.7 kB | Preview Download |
Additional details
- Eprint ID
- 32856
- Resolver ID
- CaltechAUTHORS:20120802-073722417
- Office of Naval Research (ONR)
- N00014-76-C-1068
- Army Research Office (ARO)
- DAAG29-77-C-0015
- Created
-
2012-08-02Created from EPrint's datestamp field
- Updated
-
2021-11-09Created from EPrint's last_modified field