Published July 1978
| Published
Journal Article
Open
Theoretical studies of Si and GaAs surfaces and initial steps in the oxidation
Chicago
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Abstract
Using ab initio quantum chemical methods (generalized valence bond), we examine (i) the electronic states of Si (111) and GaAs (110) surface, (ii) the relaxation of the Si (111) surface, (iii) the reconstruction of the GaAs surface, (iv) the initial steps in the chemisorption of O_2 on Si (111), and (v) the bonding of O atom to Ga and As centers.
Additional Information
© 1978 American Vacuum Society. Received 25 April 1978. The authors gratefully acknowledge useful discussions with Professors W. E. Spicer, P. Mark, and R. S. Bauer. One of us (TCM) would like to acknowledge the support of the Alfred P. Sloan Foundation. This work (Contribution No. 5770) was supported in part by a grant from the Director's Discretionary Fund of the Jet Propulsion Laboratory and by a grant from the National Science Foundation (DMR74-04965).Attached Files
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Additional details
- Eprint ID
- 32776
- Resolver ID
- CaltechAUTHORS:20120727-154434637
- Alfred P. Sloan Foundation
- JPL Director's Discretionary Fund
- NSF
- DMR74-04965
- Created
-
2012-07-30Created from EPrint's datestamp field
- Updated
-
2021-11-09Created from EPrint's last_modified field
- Other Numbering System Name
- WAG
- Other Numbering System Identifier
- 0120