Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published June 18, 2012 | Published
Journal Article Open

Electron-dependent thermoelectric properties in Si/Si_(1_x)Ge_(x) heterostructures and Si_(1-x)Ge_(x) alloys from first-principles

Abstract

Unlike phononic thermal conductivity (which is shown in the literature to be reduced due to alloying and has a nearly constant value over a range of compositional variations), electron-dependent thermoelectric properties are shown here, from first-principles, to vary nonlinearly with composition. Of the Si/Si_(1_x)Ge_(x) systems considered, the maximum thermopower observed, which is 10% higher than that of crystalline Si, is obtained for a Si_(0.875)Ge_(0.125) alloy. Also, heterostructuring is shown to reduce thermopower, electrical conductivity, and electron thermal conductivity. Additionally, neither Lorenz number nor Seebeck coefficient shows oscillations for heterostructures, regardless of electron/hole energies, contradicting the conclusions obtained with miniband approximations.

Additional Information

© 2012 American Institute of Physics. Received 9 April 2012; accepted 1 June 2012; published online 18 June 2012.

Attached Files

Published - Hossain2012p18944Appl_Phys_Lett.pdf

Files

Hossain2012p18944Appl_Phys_Lett.pdf
Files (481.8 kB)
Name Size Download all
md5:cb171e97ddb831535e84a50024dc22bc
481.8 kB Preview Download

Additional details

Created:
August 22, 2023
Modified:
October 18, 2023