Alteration of Ni silicide formation by N implantation

Abstract

The possibility of controlling the growth of nickel silicide by implanting N into thin Ni films evaporated on Si substrates has been studied using (^4)He backscattering spectrometry. The reaction between Ni and Si is completely halted below annealing temperatures of ∼375 °C by implanted doses of 5×10(^16) N/cm^2. At higher annealing temperatures, localized intermixing takes place. For low doses ≲0.5×10(^16) N/cm^2, the reaction between Ni and Si is that observed for unimplanted samples both in the phase formed (Ni(_2)Si) and in rate of growth. For intermediate doses ∼0.9×10(^16) N/cm^2, the first phase formed corresponds to NiSi, and the growth rate is greatly reduced. These results are explained in terms of a silicon nitride barrier to Ni diffusion forming at the Ni/Si interface.

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