Surface core excitons in III-V semiconductors

Abstract

Recent experiments have shown that the cation core excitons on the (110) surface of many III-V semiconductors have very large binding energies.(^1) They are sometimes reported to be bound by as much as ≳0.8 eV, tightly bound compared to bulk binding energies of ≾0.1 eV. To explore this phenomenon, we have calculated the binding energies and oscillator strengths of core excitons on the (110) surface of GaAs, GaSb, GaP, and InP.

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